Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

摘要

Cathodoluminescence characteristics of modulation-doped transistor heterostructures A1GaAs/InGaAs/A1GaAs with the width of quantum well similar to 12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of gamma-radiation with several doses on the cathodoluminescence spectra was examined.