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Transverse charge-carrier transfer in selectively doped GaAs/AlGaAs semiconductor heterostructures with longitudinal current flow

机译:具有纵向电流的选择性掺杂GaAs / AlGaAs半导体异质结构中的横向载流子转移

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摘要

Photoreflectance spectra of selectively doped GaAs/AlGaAs heterostructures are studied under the conditions of direct current flow along the structure layers. Using a model developed for the spectra, variations of the internal transverse electric fields are calculated for longitudinal current flow. It is proved experimentally that even a weak heating of electrons in such structures leads to a spatial redistribution of electrons in the direction transverse to the heterostructure layers. (c) 2005 Pleiades Publishing, Inc.
机译:研究了选择性掺杂的GaAs / AlGaAs异质结构在直流电流沿结构层流动的条件下的光反射光谱。使用针对光谱开发的模型,可以计算纵向电流的内部横向电场的变化。实验证明,在这种结构中,即使电子的微弱加热也会导致电子在垂直于异质结构层的方向上发生空间重新分布。 (c)2005年Pleiades Publishing,Inc.

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