Morphological and MicroRaman Study of MBE In_xGa_(1-x)Sb / In_yAl_(1-y) Sb Heterostructures Grown on (100) GaAs Substrates

摘要

The morphology and structure of In_xGa_(1-x)Sb / In_yAl_(1-y)Sb heterostructures grown by MBE on (100) GaAs substrates under either low or high Sb_4 flux are studied by means of optical microscopy and Raman spectroscopy. The texture of the surface appear, as obtained by PSM imaging, to be different for both specimens, being the surface rougher for low Sb_4 flux. Raman spectroscopy reveals different cation composition for both Sb_4 flux conditions. These observations are discussed in terms of In and Ga incorporation. Some growth defects are studied.