Schottky diodes of Au on GaAs/sub 1-x/Sb/sub x//GaAs n-N heterostructures grown by MBE

摘要

Au Schottky barrier heights on molecular-beam-epitaxial grown n-GaAs/sub 1-x/Sb/sub x//N-GaAs heterostructures with x up to 0.26 have been studied. It was found that phi /sub bn/=0.9-1.77x+2.89x/sup 2/, or phi /sub bn/ approximately=0.77E/sub g/-0.20 for x>0.26. The pinning position of the Fermi level with respect to the valence-band edge for x>0.26 takes the form of E/sub pin/=-0.52x+0.53 eV, which also appears to be valid for an x value up to 1.0.