High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown in{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs heterostructures

S. B. Aleksandrov; A. N. Alekseev; D. M. Demidov; A. L. Dudin; N. I. Katsavets; I. V. Kogan; Yu. V. Pogorelskii; A. L. Ter-Martirosyan; E. G. Sokolov; V. P. Chaly; A. P. Shkurko

首页> 外文期刊>Technical physics letters: Letters to the Russian journal of applied physics >High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown in{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs heterostructures

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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown in{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs heterostructures

机译：基于{sub} 0.1Ga {sub} 0.9As / AlGaAs / GaAs异质结构中的MBE生长的大功率低阈值激光二极管（λ=0.94μm）

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The parameters of high-power laser diodes operating at λ = 0.94 μtm, based on MBE-grown In{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are characterized by a low threshold current density, a high optical output power, a high differential quantum efficiency, and a long working life (above 10000 h).

机译：报告了基于MBE生长的In {sub} 0.1Ga {sub} 0.9As / AlGaAs / GaAs量子尺寸异质结构在λ= 0.94μtm下工作的大功率激光二极管的参数。使用优化的MBE技术和特殊选择的掺杂剂分布制造的激光二极管具有低阈值电流密度，高光输出功率，高差分量子效率和长使用寿命（10000小时以上）的特点。

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《Technical physics letters: Letters to the Russian journal of applied physics》 |2002年第8期|共3页
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S. B. Aleksandrov; A. N. Alekseev; D. M. Demidov; A. L. Dudin; N. I. Katsavets; I. V. Kogan; Yu. V. Pogorelskii; A. L. Ter-Martirosyan; E. G. Sokolov; V. P. Chaly; A. P. Shkurko;
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1. High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown in{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs heterostructures [J] . S. B. Aleksandrov, A. N. Alekseev, D. M. Demidov, Technical physics letters: Letters to the Russian journal of applied physics . 2002,第8期

机译：基于{sub} 0.1Ga {sub} 0.9As / AlGaAs / GaAs异质结构中的MBE生长的大功率低阈值激光二极管（λ=0.94μm）
2. Simple reliable processing technique for low-threshold high-power strained InGaAs-AlGaAs GRINSCH SQW laser diodes [J] . Vermaerke F., Moerman I. IEE Proceedings. Part J . 1993,第1期

机译：低阈值大功率InGaAs-AlGaAs GRINSCH SQW激光二极管的简单可靠的处理技术
3. Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers [J] . Podoskin A. A., Romanovich D. N., Shashkin I. S., Semiconductors . 2019,第6期

机译：基于InGaAs / Algaas / GaAs异质结构的矩形谐振器中闭模形成的特定特征，高功率半导体激光器
4. Characteristics and reliability of high-power InGaAs/AlGaAs laser diodes with decoupled confinement heterostructure [C] . Yoshikazu Yamada, Mitsui Chemicals, Inc., Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV . 1999

机译：具有解耦约束异质结构的大功率InGaAs / AlGaAs激光二极管的特性和可靠性
5. Material, physics, device physics, and technology of high-power pseudomorphic AlGaAs/InGaAs high electron mobility transistors. [D] . Chou, Yeong-Chang. 1997

机译：高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料，物理学，器件物理学和技术。
6. Nanoscale thermal transport across an GaAs/AlGaAs heterostructure interface [O] . Matthew Gorfien, Hailong Wang, Long Chen, 2020

机译：跨GaAs / AlGaAs异质结构界面的纳米级热传输
7. Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers [O] . Jens W. Tomm, Martin Hempel, Fabio La Mattina, 2013

机译：基于AlGaAs基大电源二极管激光器的批量和面部故障分析
8. AlGaAs Double-Heterostructure Diode Lasers Fabricated on a Monolithic GaAs/Si Substrate. [R] . Windhorn, T. H., Tsaur, B. Y., Metze, G. M., 1984

机译：在单片Gaas / si衬底上制造的alGaas双异质结构二极管激光器。

High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown in{sub}0.1Ga{sub}0.9As/AlGaAs/GaAs heterostructures

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