Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers

摘要

This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds or thousands of wavelengths) rectangular resonators based on InGaAs/GaAs/AlGaAs laser heterostructures are formed. The specific features of the spectral composition and spatial configurations of closed-mode configurations are experimentally examined. The presence of frequency combs in the spectra is demonstrated and their correspondence to the separate spatial configurations of closed modes is shown. The effect of changing the pumping level and the temperature on the mode composition of the emission is also considered.