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首页> 外文期刊>Quantum electronics >Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
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Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers

机译:大功率单模脊量子阱InGaAs / AlGaAs异质结构半导体激光器的低频强度波动

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摘要

It is shown that for an average output power of 60 mW, the spectral density of low-frequency intensity fluctuations in single-mode semiconductor lasers lies in the interval 6 * 10~(-17)-10~(-15) W~2 Hz~(-1). This fluctuation level is caused by the presence of subthreshold longitudinal modes and mode hopping, leading to the emergence of a noticeable 1/f component in their spectrum.
机译:结果表明,在平均输出功率为60 mW的情况下,单模半导体激光器的低频强度波动的光谱密度在6 * 10〜(-17)-10〜(-15)W〜2的区间内Hz〜(-1)。这种波动水平是由亚阈值纵向模式和模式跳跃引起的,从而导致频谱中出现明显的1 / f分量。

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