Backside Alpha-Irradiation Test in Flip-Chip Package in EUV 7 nm FinFET SRAM

摘要

This paper proposes an alternative method of alpha-irradiation test in flip-chip packages, backside irradiation test in EUV 7nm FinFET SRAM. The backside-test is conducted in backside-ground flip-chips. The sample thickness is measured, and the correlation factor is calculated by Monte-Carlo simulations. The results of backside- and front-side-tests show the dependability of the proposed method.