Soft errors in 7nm FinFET SRAMs with integrated fan-out packaging

摘要

The susceptibility of SRAM circuits to alpha induced soft errors is dominated by sources extrinsic to the circuit such as lead-bearing solder, and bumping materials. Using wafer-level integrated fan-out (InFO) packaging technology, alpha particles emitted from extrinsic packaging materials can be blocked by redistribution layers (RDL) in the packaging, leaving the soft error susceptibility due to intrinsic alpha sources associated with materials used to fabricated the circuit. With technology scaling, voltage dependent SER due to intrinsic alpha particles as well as high-energy neutrons is significantly reduced in 7nm SRAM.