Compact Modeling of Long-Term MOSFET Degradation for Predicting Circuits Degradation

摘要

We propose a prediction method of long-term metal oxide semiconductor field effect transistors (MOSFETs) degradation to realize CMOS circuit design for reliability. Negative bias temperature instability (NBTI) and hot carrier effect are considered as physical origins of the degradation. During long-term use, CMOS circuit degradation affects the circuit operation. Moreover the circuit operation also affects the CMOS circuit degradation. The develeped method can be utilized for this purpose even after long-term use, and has been verified at different long-term stress conditions by comparison with the actual transient simulation using physical models.