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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

机译：短路应力对SiC功率MOSFET中SiO2电介质劣化的影响

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Paula Diaz Reigosa; Francesco Iannuzzo; Lorenzo Ceccarelli;
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年度 2018
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1. Effect of short-circuit stress on the degradation of the SiO_2 dielectric in SiC power MOSFETs [J] . Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli Microelectronics & Reliability . 2018,第SEPa期

机译：短路应力对SiC功率MOSFET中SiO_2电介质降解的影响
2. Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress [J] . Jiaxing Wei, Siyang Liu, Lanlan Yang, Electron Devices, IEEE Transactions on . 2018,第12期

机译：反复短路应力下SiC功率MOSFET的电参数劣化的综合分析
3. Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress [J] . Wang J. L., Chen Y. Q., Feng J. T., Electron Devices Society, IEE . 2020,第期

机译：基于Repetive短路应力下SiC功率MOSFET的低频噪声的陷阱分析
4. Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress [C] . Jiaxing Wei, Siyang Liu, Jiong Fang, International Symposium on Power Semiconductor Devices and IC's . 2018

机译：长期短路应力下SiC功率MOSFET的退化机理与优化研究
5. Modeling of the impact of electrical stressors on the degradation process of power mosfets [D] . Mahiuddin, Shompa S. 2011

机译：电应力源对功率MOSFET降解过程影响的建模
6. Impact of Single pMOSFET Dielectric Degradation on NAND Circuit Performance [O] . D. Estrada, M. L. Ogas, R. G. Southwick III, -1

机译：单pMOSFET介电性能下降对NAND电路性能的影响
7. Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress [O] . J. L. Wang, Y. Q. Chen, J. T. Feng, 2020

机译：基于Repetive短路应力下SiC功率MOSFET的低频噪声的陷阱分析

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

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