Compact Modeling of Dynamic MOSFET Degradation Due to Hot-Electrons

摘要

A trap-density-based compact model of dynamic metal-oxide semiconductor field-effect transistor degradation due to hot electrons is reported, for which model parameters are extractable from measured 1/ f noise properties. It is observed that the deep trap-state increase is dominant for the degradation and approaches its maximum under long accelerated-stress duration. A key modeling concept is the explicit inclusion of the extracted stress-condition-dependent trap density in the Poisson equation, which is solved iteratively. The developed model correctly predicts actual dynamic degradation of the measured I-V characteristics, that is, trap density increase during stress application, without the disadvantage of longer simulation times. The reported model can automatically reproduce not only the threshold-voltage shift, but also the degradation of the complete I – V characteristics and all other observable effects caused by the carrier trapping, without any additional model-parameter fitting for each of these effects.