High Power, High Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

摘要

Red laser diodes were fabricated on GaAs and GaAsP metamorphic-superlattice-substrates. The tensile strained QW on GaAs emitted 45% PCE, 638nm, TM-polarized light at 880mW CW. The compressively strained QW on the metamorphic structure emitted 639nm TE-polarized light with T_0=90K and T_1=300K.