High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch

• 1. 驱动电路、具有驱动电路的半导体器件以及采用驱动电路和半导体器件的开关调节器和电子设备 [P] . 中国专利： CN102577062B . 2015.08.12
• 2. 驱动电路、具有驱动电路的半导体器件以及采用驱动电路和半导体器件的开关调节器和电子设备 [P] . 中国专利： CN102577062A . 2012-07-11
• 3. High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch [P] . 美国专利： US5477556A . 1995-12-19

  机译： 高功率激光二极管驱动器，采用具有可控硅结构开关的单片半导体器件

• 4. High power laser diode driver utilizing a monolithic semiconductor device [P] . 英国专利： GB9504651D0 . 1995-04-26

  机译： 利用单片半导体器件的高功率激光二极管驱动器

• 5. High power laser diode driver utilizing a monolithic semiconductor device [P] . 美国专利： US5450430A . 1995-09-12

  机译： 利用单片半导体器件的高功率激光二极管驱动器

• 1. Computerized FDTD Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication [J] . Phyo Sandar Win, Hsu Myat Tin Swe, Hla Myo Tun 计算机科学研究(英文) . 2021,第002期
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• 3. Diode-pumped wavelength-switchable visible Pr^(3+):YLF laser and vortex laser around 670 nm [J] . Xiuji Lin, Qichen Feng, Yao Zhu, 光电进展（英文） . 2021,第004期
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• 8. Review of Selected Smart Pixels: Self Electro-Optic Effect Devices, SurfaceEmitting Laser Logic Devices, Double Heterostructure Opto-Electronic Switch, Diode Laser Logic, Quenched-Laser Optical Gates [R] . Parker, M. A., Michalak, R. J., Kimmet, J. S., 1995

• 1. Diode Pumped High Peak Power Quasi Q-Switched and Passively Q-Switched Nd:YVOsub4/subLasers at 1064 nm and 532 nm using Cr:YAG and KTP crystals [J] . Ashraf F. El-Sherif ,Mahmoud M. Talat . 光学与光子学期刊（英文） . 2013,第1期
• 2. Drivers for High Power Laser Diodes [J] . Yankov P ,Todorov D ,Saramov E . 光机电信息 . 2006,第006期
• 3. 采用INTEL80C196KB/KC单片微机控制的同步电动机可控硅励磁系统的设计 [C] . 王红君 ,张书珍 ,赵辉 . 中国农村电气化学术会议 . 1999
• 4. 提高高压功率半导体集成器件中二极管开关性能的研究 [A] . 程序 . 2003