High-Power and Low-Divergence 980-nm InGaAs-GaAsP-AlGaAs Strain-Compensated Quantum-Well Diode Laser Grown by MOCVD

摘要

High-power InGaAs-GaAsP-AlGaAs strain-compensated separate-confinement heterostructure double quantum-well lasers emitting at 980-nm wavelength have been grown by low-pressure metal-organic epitaxial chemical vapor deposition. Fabricated with ridge waveguide, the lasers achieved an output power of 386 mW in the fundamental lateral mode without kink observed. By optimizing the laser structure parameters, a very low transverse beam divergence of 22.1° and a high slope efficiency of up to 0.89 mW/mA were obtained. The narrow transverse far field enables an output power of over 290 mW being coupled into the single-mode fiber with a high coupling efficiency of 83.2% at 430 mA. Life testing at various powers shows excellent long-term reliability after 3500 h.