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Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

机译:硅衬底上的应变极薄的In0.53Ga0.47As绝缘体上MOSFET

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We report the first demonstration of strained In0.53Ga0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In0.53Ga0.47As-OI structures were successfully fabricated on Si by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1.65 × effective mobility (μeff) enhancement against InGaAs MOSFET without strain with maintaining high Ion/Ioff ratio of ∼105. It is revealed from Hall measurements that the μeff enhancement is attributed to the increase in mobile free electron concentration due to the lowering in the conduction band edge induced by tensile strain.
机译:我们报告了使用直接晶圆键合(DWB)技术在硅衬底上的In-inf 0.53 Ga 0.47 绝缘体上(-OI)MOSFET的首次演示。利用DWB在Si上成功制备了1.7%的高应变In 0.53 Ga 0.47 As-OI结构。带有Ni-InGaAs金属S / D的应变In 0.53 Ga 0.47 As-OI MOSFET首次成功运行。拉伸应变为1.7%的MOSFET相对于InGaAs MOSFET表现出1.65倍的有效迁移率(μ eff )增强,而没有应变,同时保持了较高的I on / I off 比率约为10 5 。从霍尔测量结果表明,μ eff 的增强归因于由于拉伸应变引起的导带边缘的降低,移动自由电子浓度增加。

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