Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

摘要

We report the first demonstration of strained In0.53Ga0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In0.53Ga0.47As-OI structures were successfully fabricated on Si by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1.65 × effective mobility (μeff) enhancement against InGaAs MOSFET without strain with maintaining high Ion/Ioff ratio of ∼105. It is revealed from Hall measurements that the μeff enhancement is attributed to the increase in mobile free electron concentration due to the lowering in the conduction band edge induced by tensile strain.