Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

摘要

We report the electrical characteristics of strained In0.53Ga0.47As-on-insulator (-OI) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on Si substrates fabricated by a direct wafer bonding (DWB) technique. 1.7% highly strained In0.53Ga0.47As-OI structures are fabricated on Si substrate by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal source/drain (S/D) have been operated with high on-current (Ion)/off-current (Ioff) ratio of ∼105 and good current saturation in output characteristics. MOSFETs with 1.7% tensile strain exhibits 1.65 × effective mobility (μeff) enhancement against In0.53Ga0.47As MOSFET without strain. We found that this μeff enhancement is attributed to the increase in mobile free electron concentration under tensile strain, which leads to the lowering in the conduction band minimum (CBM) and the increase in the energy difference between CBM and the Fermi level pinning position due to a large amount of interface states by Hall measurements.