Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application

摘要

In this work, we have shown and validated bonding of titanium (Ti) coated glass with (100) silicon wafer at lower thermocompression cycle of 377 °C temperature and a nominal contact pressure of 0.15 MPa. Excellent bond strength> 100MPa and void free interface have been observed using scanning acoustic tomography (SAT), which clearly suggest that optimized temperature-pressure together can provide a superior quality bonding. Furthermore, post-bond dicing was performed in order to validate further the bonding strength which was confirmed by successfully dicing the Glass-Silicon pair without any damage to the bonding interface. This noble, low cost and low temperature simple bonding approach must be useful in hermetic sealing of microfluidic channels for on-chip compatible applications.