首页> 外文会议>Conference on Emerging Lithographic Technologies >Evaluation of FIB and E-beam Repairs for Implementation on Step and Flash Imprint Lithography Templates
【24h】

Evaluation of FIB and E-beam Repairs for Implementation on Step and Flash Imprint Lithography Templates

机译:对FIB和电子束修理的评估,实现步骤和闪存印记光刻模板

获取原文

摘要

In order for Step and Flash Imprint Lithography S-FIL™ or any other imprint lithography to become truly viable for manufacturing, certain elements of the infrastructure must be present. In particular, these elements include; fast and precise Electron Beam (E-beam) pattern writing, ability to inspect, and a methodology to repair. The focus of this paper will be to investigate repair of clear and opaque defects on S-FIL templates using Focused Ion Beam (FIB) and E-beam technologies. During this study, FEI's Accura XT™ FIB mask repair system was used to selectively mill opaque line edge defects as small as 45 nm in the Cr-based and 30 nm in the quartz-based patterns. Repairs to the Cr pattern achieved a placement offset of 8.8 nm with a one sigma value of 11.4 nm. Additionally, a series of trench cuts were made perpendicular through line segments to determine the minimum cut resolution. In an effort to repair clear defects within chrome patterns, studies were performed to deposit carbon or a proprietary metallization using either FEI's FIB platform or E-beam mask repair research tool. This paper will discuss the repair strategy used and include characterization of repairs through Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging. Furthermore, repair efficiency was determined by assessing the ability of the repair to hold up through the remainder of the template fabrication process and ultimately pattern transfer of imprinted features.
机译:为了进行步骤和闪存印记光刻S-FIL™或任何其他印记光刻来制造真正可行,必须存在基础设施的某些元素。特别是,这些元素包括;快速精确的电子束(电子束)图案写入,检查能力,以及修复方法。本文的重点是使用聚焦离子束(FIB)和电子光束技术来研究S-FIL模板上清晰和不透明缺陷的修复。在本研究期间,FEI的准确性XT™FIB掩模修复系统用于在基于石英的图案中选择性地在CR基和30nm中铣削不透明的线边缘缺陷。对CR模式的修理实现了8.8nm的放置偏移,其中一个SIGMA值为11.4nm。另外,一系列沟槽切割垂直于线段,以确定最小切割分辨率。为了修复Chrome模式内的清晰缺陷,使用FEI的FIB平台或电子束掩模修复研究工具进行研究以存放碳或专有金属化。本文将讨论使用的修复策略,包括通过扫描电子显微镜(SEM)和原子力显微镜(AFM)成像来表征维修。此外,通过评估修复能力通过模板制造过程的其余部分和最终进行印迹特征的模式转移来确定修复效率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号