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Evaluation of FIB and E-beam Repairs for Implementation on Step and Flash Imprint Lithography Templates

机译:对FIB和电子束维修的评估,以实现阶梯式和Flash压印光刻模板

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In order for Step and Flash Imprint Lithography S-FIL™ or any other imprint lithography to become truly viable for manufacturing, certain elements of the infrastructure must be present. In particular, these elements include; fast and precise Electron Beam (E-beam) pattern writing, ability to inspect, and a methodology to repair. The focus of this paper will be to investigate repair of clear and opaque defects on S-FIL templates using Focused Ion Beam (FIB) and E-beam technologies. During this study, FEI''s Accura XT™ FIB mask repair system was used to selectively mill opaque line edge defects as small as 45 nm in the Cr-based and 30 nm in the quartz-based patterns. Repairs to the Cr pattern achieved a placement offset of 8.8 nm with a one sigma value of 11.4 nm. Additionally, a series of trench cuts were made perpendicular through line segments to determine the minimum cut resolution. In an effort to repair clear defects within chrome patterns, studies were performed to deposit carbon or a proprietary metallization using either FEI''s FIB platform or E-beam mask repair research tool. This paper will discuss the repair strategy used and include characterization of repairs through Scanning Electronic Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging. Furthermore, repair efficiency was determined by assessing the ability of the repair to hold up through the remainder of the template fabrication process and ultimately pattern transfer of imprinted features.
机译:为了使Step and Flash压印光刻S-FIL™或任何其他压印光刻技术在制造上真正可行,必须存在基础设施的某些元素。这些元素尤其包括:快速而精确的电子束(E束)图案书写,检查能力以及维修方法。本文的重点是研究使用聚焦离子束(FIB)和电子束技术修复S-FIL模板上的透明和不透明缺陷。在这项研究中,FEI的Accura XT™FIB掩模修复系统用于选择性地铣削不透明的线边缘缺陷,在Cr基图案中小到45 nm,在石英基图案中小到30 nm。对Cr图案的修复实现了8.8 nm的位置偏移,其1σ值为11.4 nm。另外,垂直于线段进行一系列沟槽切割,以确定最小切割分辨率。为了修复铬图案中的明显缺陷,使用FEI的FIB平台或电子束掩模修复研究工具进行了沉积碳或专有金属镀层的研究。本文将讨论所使用的维修策略,并包括通过扫描电子显微镜(SEM)和原子力显微镜(AFM)成像进行维修的特性。此外,修复效率是通过评估修复在模板制造过程的其余过程中保持住的能力以及最终压印特征的图案转移来确定的。

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