IMPRINT LITHOGRAPHY METHOD, MANUFACTURING METHOD OF MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY USING SAME, AND MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY MANUFACTURED BY SAME

摘要

An imprint lithography method includes: a step of forming a mask layer in a first area and a second area in contact with the first area on a base substrate; a step of reducing the thickness of the mask layer in the first area; a step of forming a first flattening layer in the first and second areas on the mask layer; a step of forming a first imprint pattern on the first flattening layer; a step of etching the first flattening layer partially with the first imprint pattern as an etching wall and forming a first flattening layer-pattern; a step of etching the mask layer partially with the first flattening layer-pattern as an etching wall and forming a first mask pattern in the first area; a step of forming a second flattening layer in the first mask pattern and the first and the second area on the mask layer; a step of forming a second imprint pattern on the second flattening layer; a step of etching the second flattening layer partially with the second imprint pattern as an etching wall and forming a second flattening layer-pattern; and a step of etching the mask layer partially with the second flattening layer-pattern as an etching wall and forming a second mask pattern in the second area.;COPYRIGHT KIPO 2016