首页> 外国专利> IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY USING SAME, AND MASTER TEMPLATE MANUFACTURED THEREBY

IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY USING SAME, AND MASTER TEMPLATE MANUFACTURED THEREBY

机译:印刷平版印刷术方法,使用相同方法制造印刷平版印刷术的主模板的方法及其制造的主模板

摘要

An imprint lithography method comprises steps of: providing a base substrate containing a first area, a second area adjacent to the first area, a third area which is adjacent to a boundary of the first area and the second area and is a part of the second area, and a fourth area which is adjacent to the boundary and is a part of the first area; forming a first imprint pattern within the first and third areas on the base substrate; forming a first resist pattern covering the second area on the base substrate where the first imprint pattern is formed; etching a lower part of the first imprint pattern by having the first imprint pattern and the first resist pattern be an etching barrier; removing the first resist pattern; forming a second imprint pattern within the second and fourth areas on the base substrate; forming a second resist pattern covering the first area on the base substrate where the second imprint pattern is formed; etching a lower part of the second imprint pattern by having the second imprint pattern and the second resist pattern be an etching barrier; and removing the second resist pattern.;COPYRIGHT KIPO 2016
机译:压印光刻方法包括以下步骤:提供包含第一区域,与第一区域相邻的第二区域,与第一区域和第二区域的边界相邻并且是第二区域的一部分的第三区域的基础衬底。区域,以及与边界相邻并且是第一区域的一部分的第四区域;在基础基板的第一和第三区域内形成第一压印图案;在形成有第一压印图案的基础基板上形成覆盖第二区域的第一抗蚀剂图案;通过使第一压印图案和第一抗蚀剂图案为蚀刻阻挡层来蚀刻第一压印图案的下部;去除第一抗蚀剂图案;在基础基板的第二和第四区域内形成第二压印图案;在形成有第二压印图案的基础基板上形成覆盖第一区域的第二抗蚀剂图案;通过使第二压印图案和第二抗蚀剂图案为蚀刻阻挡层来蚀刻第二压印图案的下部;并去除第二种抗蚀剂图案。; COPYRIGHT KIPO 2016

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