IMPRINT LITHOGRAPHY METHOD, METHOD FOR MANUFACTURING MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY USING SAME, AND MASTER TEMPLATE FOR IMPRINT LITHOGRAPHY MANUFACTURED THEREBY

摘要

An imprint lithography method comprises the steps of: forming a first imprint pattern in a first area on a base substrate; forming a first resist pattern in a second area partially overlapping the first area on the base substrate; etching a lower portion of the first imprint pattern inside a third area which is a part of the first area not overlapping the second area by using the first imprint pattern and the first resist pattern as an etch barrier; removing the remaining first imprint pattern and the first resist pattern; forming a second imprint pattern in a fourth area partially overlapping the third area and overlapping the second area on the base substrate; forming a second resist pattern in the third area on the base substrate; and etching a lower portion of the second imprint pattern in the second area by using the second imprint pattern and the second resist pattern as an etch barrier.;COPYRIGHT KIPO 2017