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Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis

机译：TaN栅的ALD HfSiON电介质的击穿和导电机理的载流子分离分析

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《Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International》|2005年|P.630-631|共2页
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Seek Joo Doh; Jung Hyomig Lee; Jong Pyo Kim; Jong-Ho Lee; Yun-Seok Kim; Ha-Jin Lim; Hyung-Suk Jung; Sung Kee Han; Min Joo Kim; Nae-In Lee; Ho-Kyu Kang; Seong Geon Park; Sang Bom Kang;
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1. Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics [J] . Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Microelectronics & Reliability . 2005,第7a8期

机译：载流子分离分析，以阐明高k堆叠栅介质中的载流子传导和降解机理
2. Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics [J] . Lim Donghwan, Jung Woo Suk, Kim Young Jin, Microelectronic Engineering . 2015,第NOVa1期

机译：具有ALD HfO2，HfSiOx和HfSiON栅极电介质的MOS器件中使用不同镧前体的ALD La2O3覆盖层的电学特性
3. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing [J] . Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Microelectronics & Reliability . 2013,第12期

机译：在直流和交流应力下具有HfSiON栅极电介质的n-MOSFET中随时间变化的介电击穿（TDDB）分布
4. Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis [C] . Seok Joo Doh, Jung Hyoung Lee, Jong Pyo Kim, IEEE International Reliability Physics Symposium . 2005

机译：使用载体分离分析的棕褐色栅极与Tan门的击穿和传导机制
5. The Effects of Processing Induced Damage on Electrical Conduction Mechanisms and Time-Dependent Dielectric Breakdown of Low-k Organosilicates. [D] . Nichols, Michael Thomas. 2013

机译：加工引起的损伤对低k有机硅酸盐的导电机理和时间依赖性介电击穿的影响。
6. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics [O] . Michitaka Yoshino, Yuto Ando, Manato Deki, 2019

机译：具有ALD-Al2O3栅极电介质的全离子注入常关GaN DMOSFET
7. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing [O] . Hirano Izumi, Nakasaki Yasushi, Fukatsu Shigeto, 2013

机译：在直流和交流应力下具有HfSiON栅极电介质的n-MOSFET中随时间变化的介电击穿（TDDB）分布

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