Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

摘要

This paper discusses time-dependent dielectric breakdown (TDDB) in n-FETs with HfSiON gate stacks under various stress conditions. It was found that the slope of Weibull distribution of Tbd, Weibull β, changes with stress conditions, namely, DC stress, unipolar AC stress and bipolar AC stresses. On the other hand, the time evolution component of stress-induced leakage current (SILC) was not changed by these stresses. These experimental results indicate that the modulation of electron trapping/de-trapping and hole trapping/de-trapping by stress condition changes the defect size in high-k gate dielectrics. Therefore, the control of injected carrier and the characteristics of trapping can provide the steep Weibull distribution of Tbd, leading to long-term reliability in scaled CMOS devices with high-k gate stacks.