Reliability investigations on a unique direct-tunneling-induced high performance partially-depleted SOI PMOS device

摘要

This paper investigates reliability of a unique direct-tunneling-induced high performance partially-depleted (PD) SOI PMOS device. For the ultra-thin gate-oxide PD SOI PMOS devices, owing to the application of the converse n/sup +/ poly-gate, the direct-tunneling mechanism can be applied to raise the floating-body potential and suppress the undesired floating-body effect. Therefore, it is important and essential to further investigate the impact of the converse n/sup +/ poly-gate on the reliability.