Evaluation of a high performance chemically amplified resist for EUVL mask fabrication

摘要

In this paper, we report on evaluation of a high e-beam sensitive CA resist, FEP171 for EUVL mask fabrication. This resist exhibits a PEB temperature sensitivity of ～1nm/°C and 8.3 nm (3 σ) CD uniformity across an EUVL mask patterned with 200 nm dense features using a 100 keV e-beam exposure system. This resist also showed a very high resolution and excellent exposure latitude. Dense line/space features down to 60 nm have been delineated in this resist. This paper will discuss the lithographic performance of this resist and compare it with that of UV-III CA resist and ZEP 520 non-CA resist.