HARM Processing Techniques for MEMS and MOEMS Devices using Bonded SOI Substrates and DRIE

摘要

Silicon-on-Insulator (SOI) MEMS devies (1) are rapidly gaining popularity in realising numerious solutions for MEMS, especially in the optical and inertia application fields. BCOrecently developed a DRIE trench etch, utilising the Bosch process, and refill process for high voltage dielectric iselectric isolation integrated circuits on thick SOI substrates (2,3,4). In this paper we present our ost recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilised to develop optical router and filter products for fibre optics telecommunications and high precision accelerometers.