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Introducing porous silicon as a sacrificial material to obtain cavities in substrate of SOI wafers and a getter material for MEMS devices

机译：引入多孔硅作为牺牲材料，以在SOI晶片的衬底中获得空腔，以及用于MEMS器件的吸气材料

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作者
Mohammad, Wajihuddin;
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作者单位

Louisiana Tech University;

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授予单位 Louisiana Tech University;
学科
学位 Ph.D.
年度 2011
页码 135 p.
总页数 135
原文格式 PDF
正文语种 eng
中图分类
关键词
入库时间 2022-08-17 11:57:10

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1. Wafer bonding with nano-imprint resists as sacrificial adhesive for fabrication of silicon-on-integrated-circuit (SOIC) wafers in 3D integration of MEMS and ICs [J] . Niklaus F, Decharat A, Forsberg F, Sensors and Actuators, A. Physical . 2009,第1期

机译：带有纳米压印抗蚀剂的晶圆键合作为牺牲粘合剂，用于在MEMS和IC的3D集成中制造集成电路硅（SOIC）晶圆
2. Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration [J] . Lin CW, Hsu CP, Yang HA, Journal of Micromechanics and Microengineering . 2008,第2期

机译：使用玻璃回流工艺实现具有嵌入式晶圆通孔的玻璃上硅MEMS器件，用于晶圆级封装和3D芯片集成
3. Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration [J] . Chiung-Wen Lin, Chia-Pao Hsu, Hsueh-An Yang, Journal of Micromechanics and Microengineering . 2008,第2期

机译：使用玻璃回流工艺实现具有嵌入式晶圆通孔的玻璃上硅MEMS器件，用于晶圆级封装和3D芯片集成
4. Introducing porous silicon as a getter using the self aligned maskless process to enhance the quality factor of packaged MEMS resonators [C] . Mohammad Wajihuddin, Wilson Chester, Kaajakari Ville 2011 Joint Conference of the IEEE International Frequency Control Symposium European Frequency and Time Forum . 2011

机译：使用自对准无掩模工艺引入多孔硅作为吸气剂，以提高封装的MEMS谐振器的品质因数
5. MEMS-based silicon nitride thin film materials and devices at cryogenic temperatures for space applications. [D] . Chuang, Wen-Hsien. 2005

机译：低温下基于MEMS的氮化硅薄膜材料和器件，用于太空应用。
6. Porous silicon in drug delivery devices and materials [O] . Emily J. Anglin, Lingyun Cheng, William R. Freeman, -1

机译：药物输送装置和材料中的多孔硅
7. Measurement techniques for high power semiconductor materials and devices. Annual report, January 1, 1976--December 31, 1976. Silicon wafers [O] . D.L. Blackburn, R.Y. Koyama, F.F. Oettinger, 1977

机译：高功率半导体材料和装置的测量技术。 1976年1月1日的年度报告 - 1976年12月31日。硅晶圆

Introducing porous silicon as a sacrificial material to obtain cavities in substrate of SOI wafers and a getter material for MEMS devices

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