Highly-selective dry etching of InAlAs over InGaAs assisted by ArF excimer laser

摘要

Highly selective etching of InAlAs over InGaAs by ArF excimer laser with Cl/sub 2/ gas was demonstrated. The etching rate of InAlAs relative to that of InGaAs increased as the laser fluence decreased and the Cl/sub 2/ pressure increased, and the highest observed etching rate ratio exceeded 70. The very fast InAlAs etching rate is speculated to be due to the higher reactivity of Al than that of Ga.