Process design for manufacturability of GaAs MESFET integrated circuit using statistical experimental design techniques

摘要

Abstract: A manufacturable, directly ion implanted 0.6 $mu@m GaAs metal- semiconductor field-effect transistors (MESFET) and metal-semiconductor- metal (MSM) based opto-electronic integrated circuit (OEIC) process has been developed and optimized for low cost optical data link applications. Key steps in the OEIC process have been identified and statistically quantifiable process modules have been obtained to optimize the circuit performance and achieve high process yield. The statistically significant transfer characteristics of each process module was obtained through design of experiment (DOE) and response surface modeling (RSM), by utilizing both experimental data and data from experimentally calibrated process simulators. This paper discusses the PECVD Si$-2$/N$-4$/ process module optimization and the backgating effects in GaAs ICs.!8