Towards a model of GaAs MESFETs for the design of cryogenic integrated circuits.

摘要

The read-out of cryogenic detectors for nuclear and particle physics, requires compatible front-end electronics operating at low temperature. GaAs MESFETs exhibit suitable DC and noise characteristics at the temperatures of interest (77 K and 4 K). Since at cryogenic temperatures the electrical characteristics of the GaAs MESFETs differ significantly from those typical of 300K, a new model must be developed to employ computer circuit simulation during the design.