Dopant Segregated Schottky S/D and Application to High Performance MOSFETs

摘要

Schottky barrier MOSFETs (SBTs) have attracted much attention as a candidate for achieving high-performance MOSFETs in future ULSIs [1-5]. Their potential advantages are low SD resistance, short channel effect immunity and high carrier injection velocity [6], and many more. The major obstacle is however, to reduce the Schottky barrier height (Φ_b) in these devices (both n- and pMOSFETs) since large Φ_b, severely limits the current drivability.