2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs

摘要

A 2D closed-form, analytical compact current model for long and short-channel Schottky barrier (SB) Multi-Gate MOSFETs is presented. The physics-based two-dimensional model for the electrostatic potential and electric field of a ultra-thin body (UTB) MOSFET is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. Furthermore, simple closed-form current equations were derived by using analytical expressions for the tunneling and thermionic currents. Essential 2D effects on the currents are included in the model which are combined with diffusion effects in the channel region. A comparison of our 2D physics-based compact model is done versus measurement data for a dopant segregated fully-depleted Schottky barrier MOSFET.