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Interface Engineering of Organic Schottky Barrier Solar Cells and Its Application in Enhancing Performances of Planar Heterojunction Solar Cells

机译:有机肖特基势垒太阳能电池的界面工程及其在提高平面异质结太阳能电池性能中的应用

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摘要

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm2, an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) of 0.82% under simulated AM1.5 G solar illumination at 100 mW/cm2. Device performance was substantially enhanced by simply inserting thin organic hole transport material into the interface of MoOx and SubPc. The optimized devices realized a 180% increase in PCE of 2.30% and a peak Voc as high as 1.45 V was observed. We found that the improvement is due to the exciton and electron blocking effect of the interlayer and its thickness plays a vital role in balancing charge separation and suppressing quenching effect. Moreover, applying such interface engineering into MoOx/SubPc/C60 based planar heterojunction cells substantially enhanced the PCE of the device by 44%, from 3.48% to 5.03%. Finally, we also investigated the requirements of the interface material for Schottky barrier modification.
机译:在这项工作中,我们描述了具有ITO /氧化钼(MoOx)/亚酞菁硼硼(SubPc)/二苯菲咯啉(BPhen)/ Al的有机肖特基势垒太阳能电池的性能。基于SubPc的肖特基势垒太阳能电池的短路电流密度(Jsc)为2.59 mA / cm 2 ,开路电压(Voc)为1.06 V,功率转换效率为(在100 mW / cm 2 的模拟AM1.5 G太阳光照下为0.82%。只需将薄的有机空穴传输材料插入MoOx和SubPc的界面即可大大提高器件性能。经过优化的器件实现了180%的PCE增长2.30%,并且观察到的峰值Voc高达1.45V。我们发现,这种改进是由于中间层的激子和电子阻挡作用所致,其厚度在平衡电荷分离和抑制猝灭作用方面起着至关重要的作用。此外,将这种接口工程应用到基于MoOx / SubPc / C60的平面异质结单元中,可以将设备的PCE显着提高44%,从3.48%提高到5.03%。最后,我们还研究了肖特基势垒改性的界面材料要求。

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