GROWTH OF P-TYPE CdZnTe THIN FILMS AS PROSPECTIVE ABSORBER LAYER FOR PHOTOVOLTAIC APPLICATION

摘要

Cadmium Zinc Telluride (CdZnTe) thin films have been deposited by thermal evaporation technique whether the absorber source is formed by mixing powder of Cadmium (Cd), Zinc (Zn) and Tellurium (Te) particles. Inert gas Argon (Ar) helps to make the CdZnTe (CZT) ternary alloy semiconductor in different annealing conditions. A comprehensive study of the films was executed by X-Ray Diffraction (XRD), Hall Effect Measurement, and UV-VIS-NIR, respectively. The non-stoichiometric composition of CZT (Cd_(0.4)Zn_(0.6)Te) was originated which has a direct optimal band gap 1.7 eV with Ar pressure of 1.62 Torr and temperature of 400°C in thermal annealing chamber at a rated current of 28A.