Application of Coherent Resonant Tunnelling Theory in GaAs RTD Fabrication

摘要

Resonant tunnelling transmission coefficient FWHM (full width at half-maximum) curves of GaAs/AlAs/ In0.1Ga0.9As double-barrier structures are computed and illustrated,and the distribution of these curves clearly show the main physical mechanism of RTD (resonant tunnelling diode) and the route of design to desired RTD's features. As example,several RTD epi-layer structures are worked out with above curves and are grown by molecular beam epitaxy method. X-ray layer thickness measurement results of these structures are exactly identical with the design data,and also the interfaces are very flat. The devices are fabricated, and the I-V features are characterized. These I-V data of our samples demonstrate a good corresponding relation to the curves, and typical peak-to-valley current ratio (PVCR) reaching 8.25 with peak current density 112KA/cm2.