首页> 外文会议>Conference on Photomask Technology; 20070918-21; Monterey,CA(US) >EUV mask substrate flatness improvement by laser irradiation
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EUV mask substrate flatness improvement by laser irradiation

机译:通过激光辐照提高EUV掩模基板的平整度

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We demonstrate a new technique for improvement of the flatness of the EUV mask substrate by using a pulsed laser. Laser pulses from an ArF excimer laser were focused inside a quartz mask substrate to make spots. Experiments showed that the substrate surface was locally swelled out where spots were formed just beneath the surface without making any damages on the surface. This surface shape control technique can be applied to the final adjustment of the substrate flatness control since no cleaning process is necessary afterward.
机译:我们演示了一种通过使用脉冲激光来改善EUV掩模基板的平面度的新技术。将来自ArF准分子激光器的激光脉冲聚焦在石英掩模基板内部以形成斑点。实验表明,衬底表面局部膨胀,在表面正下方形成斑点,而不会在表面上造成任何损坏。这种表面形状控制技术可以应用于基板平整度控制的最终调整,因为此后无需进行清洁过程。

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