机译:EUV投票制版光刻技术可减轻印刷掩模缺陷,改善CDU并减少随机故障
IMEC vzw, Leuven, Belgium;
IMEC vzw, Leuven, Belgium;
IMEC vzw, Leuven, Belgium;
IMEC vzw, Leuven, Belgium;
ASML Netherlands B.V., Veldhoven, The Netherlands;
ASML Netherlands B.V., Veldhoven, The Netherlands;
ASML Netherlands B.V., Veldhoven, The Netherlands;
ASML Netherlands B.V., Veldhoven, The Netherlands;
GLOBALFOUNDRIES, Malta, New York, United States;
GLOBALFOUNDRIES, Hopewell Junction, New York, United States;
Extreme ultraviolet lithography; vote-taking; Extreme ultraviolet reticle defects; stochastic defects; ASML NXE:3400;
机译:EUV光刻中的随机效应:随机,局部CD可变性和印刷失败
机译:基于模型的抗蚀剂和掩模对EUV光刻中低于30 nm接触孔的局部CDU的影响
机译:SEMATECH报告EUV光刻掩模缺陷,清洁突破
机译:EUV光刻的投票:减轻掩模缺陷的一种根本方法
机译:具有掩埋缺陷的EUV光刻掩模的仿真和补偿方法。
机译:随机模拟评估奶牛群中常规激素干预的甲烷排放量减少和生殖效率提高
机译:减轻EUV面罩缺陷的综合缺陷避免框架
机译:用投票光刻法消除面罩引起的缺陷