SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, METHOD FOR PRODUCING REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

An object of the present invention is to provide a substrate with a multilayer reflective film that provides a reflective mask having high reflectance and excellent cleaning resistance. The present invention provides a substrate 12, a multilayer reflective film 14 formed on the substrate 12, in which a plurality of layers containing Si as a high refractive index material and a layer containing a low refractive index material are periodically stacked, It has a Ru-based protective film 16 formed on the multilayer reflective film 14 to protect the multilayer reflective film 14, and the surface layer of the multilayer reflective film 14 on the opposite side of the substrate is a layer containing the Si, and , The Ru-based protective film 16 contains a Ru compound containing Ru and Ti, and the Ru compound is a substrate provided with a multilayer reflective film containing more Ru than RuTi having a stoichiometric composition.