REFLECTIVE-LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY REFLECTIVE MASK FOR EUV LITHOGRAPHY AND PROCESS FOR PRODUCING REFLECTIVE-LAYER-EQUIPPED SUBSTRATE

摘要

A substrate on which a reflection layer used for manufacturing the EUV mask blank is formed, and a method for manufacturing a substrate on which the reflection layer is formed. A substrate on which a reflective layer for EUV lithography is formed on a substrate and in which a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer are formed in this order, wherein the reflective layer is a Mo / Si multilayer reflective film, Layer or an Ru compound layer is formed between the reflective layer and the protective layer, and an intermediate layer containing 0.5 to 25 at% of nitrogen and 75 to 99.5 at% of Si is formed between the reflective layer and the protective layer Board.;