Shallow Trench Isolated CMOS Transistors Fabricated With Atmospheric Pressure CVD Oxide Trench Fill

摘要

A shallow trench isolation process for quarter micron CMOS technology was developed using the Quester Technology APT-5850 Ozone TEOS deposition system. The results obtained so far are very promising. This paper outlines the atmospheric pressure CVD trench fill process and presents electrical characterization data for both N~+ to P~+ isolation and PMOS and NMOS device performance.