Selective Growth of InAs Quantum Dots on Patterned GaAs Substrate by Metal-Organic Chemical Vapor Deposition

摘要

The research of self-assembled quantum dots (QDs) formed by the Stranski-Krastanov (SK) growth mode has been of considerable interest in recent years. However, precise positioning of QDs on a substrate, which is required for many device applications, has been difficult due to the random distribution nature of SK growth mode. A number of approaches, including patterned process and strain engineering, have been proposed to cope this problem. In this paper, we demonstrate QDs on nano-scale mesa using wet chemical etching and epitaxial growth processes.