Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition

摘要

The growth parameters affecting the deposition of InAs quantum dots (QDs) by metal-organic chemical-vapor deposition are reported. Experiments with arsine pause, gas switching, and hydrogen shroud flow show that a low Ⅴ/Ⅲ ratio is the key to obtaining three-dimensional InAs island formation with high density and uniformity. Based on atomic force microscopy images of InAs QDs deposited under different growth conditions, a physical model for the epitaxial growth of three-dimensional islands is proposed. In this model, the InAs QD growth is governed by two types of arsenic sources at the growth surface: free arsenic atoms arriving at the boundary layer and dangling arsenic bonds available at the GaAs wafer surface. At high Ⅴ/Ⅲ ratio, free arsenic atoms arriving at the boundary layer are the dominant hydride species and produce a low density of InAs islands with irregular shape and polycrystalline defects. At low Ⅴ/Ⅲ ratio arsenic bonds on the GaAs surface are the main sites for indium atoms to attach to, thus producing high island densities and small coherent island sizes.