Electrical properties of super junction p-n diodes fabricated by trench filling

摘要

We have fabricated Super Junction (SJ) p-n diodes by our previously proposed defect-less trench filling technique with pre- and post-annealing in H₂. The trench filling technique has been applied to a comparatively low aspect ratio p column structure. Electrical measurements of the SJ p-n diode indicate an increase in breakdown voltage from 70V to 195V due to the multi RESURF effect of the p column structure. The leakage current of the diode is below 1x10^-7a/cm² at a reverse bias voltage of 150V. It has been experimentally confirmed that complete depletion occurs when the number of acceptors in the p column is equal to that of donors in the n column.