Electrical properties of lateral p-n junction diodes fabricated by selective growth of n~+ diamond

摘要

We fabricated diamond lateral p-n junction diodes by selective growth of n~+-rype diamond and evaluated their structural and electrical properties. The phosphorus-doped n~+ diamond was selectively grown by microwave chemical vapor deposition at the side of a boron-doped p-type layer to form lateral p-n junction diodes. No distinct defects are observed at the interface of the p-n junction diode by cross-sectional transmission electron microscopy, implying the good homoepitaxial growth of the n-type diamond. Electron beam induced-current measurements directly confirmed the existence of the depletion layer in p-n junction diode. The electrical properties of the lateral p-n junction diodes were investigated at room temperature to 773 K. The devices show normal diode characteristics at all temperatures. A very low leakage current <10~_(14)A in the reverse bias was obtained at room temperature, resulting in a high rectification ratio of 108. Although the rectification ratio decreases with increasing temperature, it possesses 106 even at 573 K. A breakdown voltage was examined to be more than 100 V.