Metallization and Characterization of a Silicon p-N Junction Diode Fabricated from a Solar-Cell-Type Silicon Substrate.

摘要

The paper describes the metallization and characterization of a silicon p-n junction diode fabricated, in the laboratory, from a solar-cell-type silicon substrate, using simple equipment and locally-available materials. Metallization of the fabricated device was achieved by electroless nickel plating without the use of a chemical activator such as palladous chloride (PdCl/sub 4/) which is very expensive. On the basis of the abrupt-junction approximation, values for the substrate concentration and the built-in potential of the fabricated device are calculated from the latter C-V profile and found to be approx. 8.5x10/sup 15/cm/sup -3/ and 0.53V respectively. The value of the substrate concentration agrees fairly well with that estimated from the resistivity of the substrate. (author). 5 refs, 3 figs. (Atomindex citation 19:062513)