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Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

机译：低温直接晶片键合和层剥落法制备的锗/硅p-n结的特性

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Gity Farzan; Byun Ki Yeol; Lee Ko-Hsin; Cherkaoui Karim; Hayes John M.; Morrison Alan P.; Colinge Cindy; Corbett Brian M.;
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1. Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation [J] . Farzan Gity, Ki Yeol Byun, Ko-Hsin Lee, Applied Physics Letters . 2012,第9期

机译：低温直接晶片键合和层剥落法制备的锗/硅p-n结的特性
2. Low temperature germanium to silicon direct wafer bonding using free radical exposure [J] . Ki Yeol Byun, Isabelle Ferain, Pete Fleming, Applied Physicsletters . 2010,第10期

机译：使用自由基暴露的低温锗与硅直接晶圆键合
3. Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates [J] . Swapnadip Ghosh, Darin Leonhardt, Sang M. Han Journal of Applied Physics . 2014,第9期

机译：穿线位错密度和介电层对硅衬底上晶片尺寸外延生长的p型锗制成的高空穴迁移率金属半导体场效应晶体管的温度相关电特性的影响
4. Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation [C] . F. Gity, K. Y. Byun, K. -H. Lee, Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 2. . 2012

机译：通过直接晶圆键合和层剥离制造Ge / Si p-n二极管
5. Semi-transparent zinc oxide:aluminum/copper(I) oxide thin-film heterojunction fabricated at low temperature: Effect of an intrinsic ZnO buffer layer at the junction [D] . Huang, Yu-Nung 2011

机译：半透明氧化锌：低温制备的铝/铜（I）氧化物薄膜异质结：结处本征ZnO缓冲层的作用
6. Residual Stress in Lithium Niobate Film Layer of LNOI/Si Hybrid Wafer Fabricated Using Low-Temperature Bonding Method [O] . Ryo Takigawa, Toru Tomimatsu, Eiji Higurashi, 2019

机译：低温键合法制备的LNOI / Si杂化晶片铌酸锂薄膜层中的残余应力
7. Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation [O] . Gity Farzan, Byun Ki Yeol, Lee Ko-Hsin, 2012

机译：通过低温直接晶片键合和层剥离制造的锗/硅p-n结的表征
8. Metallization and Characterization of a Silicon p-N Junction Diode Fabricated from a Solar-Cell-Type Silicon Substrate. [R] . Ebong, A. U., Adjepong, S. K. 1987

机译：由太阳能电池型硅基板制造的硅p-N结二极管的金属化和表征。

Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

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