Electrical characteristics of p-n junction diodes fabricated by si epitaxy at low temperature using sputtering-type electron cyclotron

摘要

This article reports the electrical characteristics of p-n junction diodes that were formed by directly depositing a Sb-doped n-type epilayer on a p-type substrate by using a dc-bias electron cyclotron resonance plasma sputtering system at a low temperature of 400deg.C and a conventional vacuum of 5x10~-7 torr. The reverse current density of the n~+ -p junctions diodes depends on deposition gas pressures an substrate biases.