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TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
TRENCH ISOLATION MOS P-N JUNCTION DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
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机译:沟槽隔离MOS P-N结二极管装置及其制造方法
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摘要
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.
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